Technical ability:

1. Mixed pressure of high-speed materials and planar capacitor materials

2, POFV, double-sided buried capacity process

3. The capacitance value is 0.5-6.5nF/in2.

4. The thickness of capacitor layer is 8-50um.

5、Dk(1GHz) 3.2-10

6、Df(1GHz) 0.015-0.021

Design features:

12L H175HF+MC24M mixed pressure

2. MC24M material is etched on both sides, and the capacitance value is 1.2nF/in2.

3. The core plate is pressed by mass-lam, and the thickness of the pressed plate is 2.0 mm.

4. stub design for back drilling is 2-8mil

application area

Aerospace military industry, AI server